TH58NYG2S3HBAI6

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TH58NYG2S3HBAI6

IC FLASH 4GBIT PARALLEL 63BGA

Model:

TH58NYG2S3HBAI6

Manufacturer:

Kioxia America, Inc.

Category:

Integrated Circuits (ICs) > Memory > Memory

Description:

IC FLASH 4GBIT PARALLEL 63BGA

RoHS:

YES

：

TH58NYG2S3HBAI6Specifications

Part Status :

Active

Operating Temperature :

-40°C ~ 85°C (TA)

Mounting Type :

Surface Mount

Programmable :

Not Verified

Memory Interface :

Parallel

Memory Type :

Non-Volatile

Memory Format :

FLASH

Write Cycle Time - Word, Page :

25ns

Voltage - Supply :

1.7V ~ 1.95V

Memory Size :

4Gbit

Memory Organization :

512M x 8

Technology :

FLASH - NAND (SLC)

Package / Case :

63-BGA

Supplier Device Package :

63-BGA (9x11)

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