BY25D40ESOIG(R)

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BY25D40ESOIG(R)

4 MBIT, 3.0V (2.7V TO 3.6V), -40

Model:

BY25D40ESOIG(R)

Manufacturer:

BYTe Semiconductor

Category:

Integrated Circuits (ICs) > Memory > Memory

Description:

4 MBIT, 3.0V (2.7V TO 3.6V), -40

RoHS:

YES

：

BY25D40ESOIG(R)

BY25D40ESOIG(R)Specifications

Part Status :

Active

Operating Temperature :

-40°C ~ 85°C (TA)

Mounting Type :

Surface Mount

Grade :

-

Qualification :

-

Memory Type :

Non-Volatile

Clock Frequency :

120 MHz

Memory Size :

4Mbit

Memory Organization :

512K x 8

Voltage - Supply :

2.7V ~ 3.6V

Package / Case :

8-TSSOP (0.173", 4.40mm Width)

Supplier Device Package :

8-TSSOP

Memory Format :

FLASH

Technology :

FLASH - NOR

Access Time :

7 ns

Memory Interface :

SPI - Dual I/O

Write Cycle Time - Word, Page :

3.6ms

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