BY25D10ASOIG(R)
1 MBIT, 3.0V (2.7V TO 3.6V), -40
Model:
BY25D10ASOIG(R)
Manufacturer:
BYTe Semiconductor
Category:
Integrated Circuits (ICs) > Memory > Memory
Description:
1 MBIT, 3.0V (2.7V TO 3.6V), -40
RoHS:
YES
BY25D10ASOIG(R)Specifications
Part Status :
Active
Operating Temperature :
-40°C ~ 85°C (TA)
Mounting Type :
Surface Mount
Grade :
-
Qualification :
-
Memory Type :
Non-Volatile
Memory Size :
1Mbit
Memory Organization :
128K x 8
Voltage - Supply :
2.7V ~ 3.6V
Package / Case :
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package :
8-TSSOP
Memory Format :
FLASH
Technology :
FLASH - NOR
Access Time :
7 ns
Clock Frequency :
108 MHz
Memory Interface :
SPI - Dual I/O
Write Cycle Time - Word, Page :
2.4ms