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BY25FQM512ESWIG(R)
511 MBIT, 3.0V (2.7V TO 3.6V), -
Model:
BY25FQM512ESWIG(R)
Manufacturer:
BYTe Semiconductor
Category:
Integrated Circuits (ICs)
> Memory
> Memory
Description:
511 MBIT, 3.0V (2.7V TO 3.6V), -
RoHS:
YES
BY25FQM512ESWIG(R)Specifications
Part Status
:
Active
Operating Temperature
:
-40°C ~ 85°C (TA)
Mounting Type
:
Surface Mount
Grade
:
-
Qualification
:
-
Memory Type
:
Non-Volatile
Voltage - Supply
:
2.7V ~ 3.6V
Memory Format
:
FLASH
Package / Case
:
8-WDFN Exposed Pad
Technology
:
FLASH - NOR
Clock Frequency
:
166 MHz
Memory Size
:
512Mbit
Memory Organization
:
64M x 8
Access Time
:
5 ns
Supplier Device Package
:
8-WSON (5x6)
Memory Interface
:
SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page
:
100µs, 2.4ms
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