BY25FQM512ESWIG(R)
511 MBIT, 3.0V (2.7V TO 3.6V), -
Model:
BY25FQM512ESWIG(R)
Manufacturer:
BYTe Semiconductor
Category:
Integrated Circuits (ICs) > Memory > Memory
Description:
511 MBIT, 3.0V (2.7V TO 3.6V), -
RoHS:
YES
BY25FQM512ESWIG(R)Specifications
Part Status :
Active
Operating Temperature :
-40°C ~ 85°C (TA)
Mounting Type :
Surface Mount
Grade :
-
Qualification :
-
Memory Type :
Non-Volatile
Voltage - Supply :
2.7V ~ 3.6V
Memory Format :
FLASH
Package / Case :
8-WDFN Exposed Pad
Technology :
FLASH - NOR
Clock Frequency :
166 MHz
Memory Size :
512Mbit
Memory Organization :
64M x 8
Access Time :
5 ns
Supplier Device Package :
8-WSON (5x6)
Memory Interface :
SPI - Quad I/O, QPI, DTR
Write Cycle Time - Word, Page :
100µs, 2.4ms