K4B4G1646E-BYK000

Home > Integrated Circuits (ICs) > Memory > Memory > Product details

K4B4G1646E-BYK000

DDR3-1600 4GB (256MX16)1.25NS CL

Model:

K4B4G1646E-BYK000

Manufacturer:

Samsung Semiconductor, Inc.

Category:

Integrated Circuits (ICs) > Memory > Memory

Description:

DDR3-1600 4GB (256MX16)1.25NS CL

RoHS:

YES

：

K4B4G1646E-BYK000Specifications

Part Status :

Active

Mounting Type :

Surface Mount

Programmable :

Not Verified

Memory Type :

Volatile

Memory Interface :

Parallel

Package / Case :

96-TFBGA

Memory Format :

DRAM

Memory Size :

4Gbit

Memory Organization :

256M x 16

Clock Frequency :

800 MHz

Operating Temperature :

0°C ~ 95°C

Voltage - Supply :

1.35V

Products that you may be interested in

MB85RS64PNF-G-AMERE2

IC FRAM 64KBIT SPI 20MHZ 8SOP

$3.07 More orders

EM016LXQBB310ISCR

IC RAM 16MBIT XSPI/QUAD 24TBGA

$15.82 More orders

EM016LXQBDH10ISCR

IC RAM 16MBIT XSPI/QUAD 8DFN

$15 More orders

EM008LXQBB310ISCR

IC RAM 8MBIT XSPI/QUAD 24TBGA

$14.08 More orders

EM004LXQBDH10ISCR

IC RAM 4MBIT XSPI/QUAD 8DFN

$10.14 More orders

EM004LXQBB310ISCR

IC RAM 4MBIT XSPI/QUAD 24TBGA

$10.97 More orders

EM008LXQBDH10ISCR

IC RAM 8MBIT XSPI/QUAD 8DFN

$13.27 More orders

SPI SLC NAND FLASH 512MBIT

$1.05 More orders

BR25G160FVM-5TR

16KBIT, SPI BUS, SERIAL EEPROM :

$0.43 More orders

MX25U51293GZ4I40A

MX25L25673GZ4I40A

$3.27 More orders

MX25L25673GZ4I48A

$3.27 More orders

AT25QF128A-SXUB-T

128MBIT 16-PIN 300MIL SOIC IND

$1.74 More orders

Copyright@2025 All Rights Reserved |

Technical Support：Clustering Technology